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2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

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Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 2N3906

product name : semiconductor triode type

Application : mobile power supply/ led driver/motor control

Material : Silicon

Emitter-Base Voltage : 6V

Case : Tape/Tray/Reel

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SOT-89-3L Plastic-Encapsulate Transistors 2N3906 ​TRANSISTOR (NPN).

FEATURE

Ÿ PNP silicon epitaxial planar transistor for switching and Amplifier applications

Ÿ As complementary type, the NPN transistor 2N3904 is Recommended

Ÿ This transistor is also available in the SOT-23 case with the type designation MMBT3906

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

MAXIMUM RATINGS(Ta=25ć unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -0.2 A
PC Collector Power Dissipation 0.625 W
TJ Junction Temperature 150 ć
Tstg Storage Temperature -55~150 ć

Ta=25 Š unless otherwise specified

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = -10µA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC =-1mA , IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE= -10µA, IC=0 -5 V
Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 µA
Collector cut-off current ICEX VCE= -30 V,VEB(off)=-3V -50 nA
Emitter cut-off current IEBO VEB= -5 V , IC=0 -0.1 µA

DC current gain

hFE1 VCE=-1 V, IC= -10mA 100 400
hFE2 VCE=-1 V, IC= -50mA 60
hFE3 VCE=-2 V, IC= -100mA 30
Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5mA -0.4 V
Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5mA -0.95 V
Transition frequency fT

VCE=-20V, IC= -10mA

f = 100MHz

250 MHz
Delay Time td

VCC=-3V,VBE=-0.5V,

IC=-10mA,IB1=-1mA

35 ns
Rise Time tr 35 ns
Storage Time ts

VCC=-3V,Ic=-10mA

IB1=IB2=-1mA

225 ns
Fall Time tf 75 ns


Typical Characteristics

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply


Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.300 3.700 0.130 0.146
A1 1.100 1.400 0.043 0.055
b 0.380 0.550 0.015 0.022
c 0.360 0.510 0.014 0.020
D 4.300 4.700 0.169 0.185
D1 3.430 0.135
E 4.300 4.700 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.440 2.640 0.096 0.104
L 14.100 14.500 0.555 0.571
0 1.600 0.063
h 0.000 0.380 0.000 0.015





SOT-89-3L Suggested Pad Layout

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply


TO-92 Suggested Pad Layout
2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply


TO-92 7DSH DQG 5HHO

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply

2N3906 NPN Transistor Circuit , NPN Power Transistor For Mobile Power Supply


Product Tags:

tip pnp transistor

      

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