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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

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HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE  High power and current handing ...

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high current transistor

      

logic mosfet switch

      
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