Customized Size Mos Field Effect Transistor With Low ON Resistance
Mos Field Effect Transistor Introduction
Power MOSFETs are normally used in applications where voltages do not exceed about 200 volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and size less metalwork and cooling is required. Also the low ON resistance means that efficiency levels can be maintained at a higher level.
Mos Field Effect Transistor Feature
30V/110A
R DS(ON) = 2.1mΩ(typ.)@V GS = 10V
R DS(ON) = 2.7mΩ(typ.)@V GS = 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
Mos Field Effect Transistor Applications
Switching application
Battery Protection
Power Management for DC/DC
Ordering and Marking Information
D U V
G023N03 G023N03 G023N03
XYWXXXXXX XYWXXXXXX XYWXXXXXX
Package Code
D: TO-252-2L U: TO-251-3L V:TO-251-3S
Date Code
XYWXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
Absolute Maximum Ratings
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