Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management

Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management

Power MOSFET types

Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers. They use a number of different techniques that enable the power MOSFETs to carry the current and handle the power levels more efficiently. As already mentioned they often incorporate a form of vertical structure

The different types of power MOSFET have different attributes and therefore can be particularly suited for given applications.

• Planar power MOSFET: This is the basic form of power MOSFET. It is good for high voltage ratings because the ON resistance is dominated by the epi-layer resistance. This structure is generally used when a high cell density is not needed.
• VMOS: VMOS power MOSFETs have been available for many years. The basic concept uses a V groove structure to enable a more vertical flow of the current, thereby providing lower ON resistance levels and better switching characteristics. Although used for power switching, they may also be used for high frequency small RF power amplifiers.
• UMOS: The UMOS version of the power MOSFET uses a grove similar to that the VMOS FET. However the grove has a flatter bottom to it and provides some different advantages.
• HEXFET: This form of power MOSFET uses a hexagonal structure to provide the current capability.
• TrenchMOS: Again the TrenchMOS power MOSFET uses a similar basic grove or trench in the basic silicon to provide better handling capacity and characteristics. In particular, Trench power MOSFETs are mainly used for voltages above 200 volts because of their channel density and hence their lower ON resistance.

Feature

-40V/-50A
R DS(ON) = 9.1mΩ(typ.)@V GS = -10V
R DS(ON) = 12mΩ(typ.)@V GS = -4.5V
100% avalanche tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)

Ordering and Marking Information

D U V

G110P04L G110P04L G110P04L

XYWXXXXXX XYWXXXXXX XYWXXXXXX

Package Code

D: TO-252-2L U: TO-251-3L V:TO-251-3S

Date Code

XYMXXXXXX

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.

Absolute Maximum Ratings

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Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Images